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2SD427 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD427
Descripción Electrónicos  isc Silicon NPN Power Transistors
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD427 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD427
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High Power Dissipation-
: PC= 80W(Max)@TC=25℃
·Complement to Type 2SB557
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 50W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IE
Emitter Current-Continuous
-8
A
PC
Collector Power Dissipation
@TC=25℃
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
isc Website：www.iscsemi.cn


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