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2SC5439 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5439 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5439 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V VCEsat Collector-emitter saturation voltage IC=3.2A; IB=0.64 A 1.0 V VBEsat Base-emitter saturation voltage IC=3.2A; IB=0.64 A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 10 μA hFE-1 DC current gain IC=1mA ; VCE=5V 10 hFE-2 DC current gain IC=1A ; VCE=5V 14 34 Switching times ton Turn-on time 0.2 μs ts Storage time 2.0 3.5 μs tf Fall time IB1=0.64A ;IB2=1.28A VCC≈200V;RL=62.5Ω 0.15 μs |
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