2SC5404 datasheet(1/3 Pages) ISC

No. de pieza	2SC5404

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC5404

DESCRIPTION

・With TO-3P(H)IS package

・High voltage;high speed

・Low collector saturation voltage

APPLICATIONS

・Horizontal deflection output for high

resolution display,color TV

・High speed switching applications

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

600

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

9

A

ICM

Collector current-Peak

18

A

IB

Base current

4.5

A

PC

Total power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3P(H)IS) and symbol

Número de pieza similar - 2SC5404

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Toshiba Semiconductor	2SC5404	227Kb / 5P	NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
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2SC5404 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SC5404 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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