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2SC5382 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5382 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5382 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 550 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6 A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6 A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 0.1 mA ICEO Collector cut-off current VCE=550V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=3A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 10 Switching times ton Turn-on time 1.3 μs ts Storage time 4.0 μs tf Fall time IC=3A;IB1=0.6A ;IB2=1.2A RL=50Ω;VBB2=4V 0.3 μs |
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