2SC4765 datasheet(2/3 Pages) ISC

No. de pieza	2SC4765

Descripción Electrónicos	isc Silicon NPN Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

Logo

2 / 3 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC4765

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 300mA ; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3.5A; IB= 1.0A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3.5A; IB= 1.0A

1.5

ICBO

Collector Cutoff Current

VCB= 1700V ; IE= 0

1.0

IEBO

Emitter Cutoff Current

VEB= 5V ; IC= 0

200

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 3.5A ; VCE= 5V

3.5

7.5

VECF

C-E Diode Forward Voltage

IF= 3.5A

2.0

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

MHz

COB

Output Capacitance

IE=0 ; VCB=10V;ftest=1.0MHz

250

Switching times ;Resistive load

tstg

Storage Time

3.0

μs

Fall Time

IC= 3.5A , IB1= 0.7A ; IB2= -1.4A

RL= 56Ω

0.2

μs

isc Website：www.iscsemi.cn

2SC4765 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

2SC4765 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

Datasheet Descarga

Enlace URL