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2SC4744 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4744 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current 7 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn |
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