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2SC4742 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4742 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4742 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=400mA ;IC=0 6 V ICES Collector cut-off current VCE=1500V; RBE=0 0.5 mA hFE DC current gain IC=1A ; VCE=5V 25 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=1.25A 2.0 V VBE(sat) Base-emitter saturation voltage IC=5A ; IB=1.25A 1.5 V VECF Diode forward voltage IF=6A 2.0 V tf Fall time ICP=5A; IB1=1A;IB2=-2A 0.4 μs |
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