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2SC4442 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC4442
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4442 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SC4442 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4442 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4442
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current-Continuous
1.6
A
Collector Power Dissipation
@Ta=25℃
2
PC
Collector Power Dissipation
@TC=25℃
45
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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