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2SC4236 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4236 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 3A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 1mA ; VCE= 5V 7 fT Current-Gain—Bandwidth Product IC= 0.6A ; VCE= 10V 8 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 3.5 μs tf Fall Time IC= 3A , IB1= 0.6A; IB2= -1.2A RL= 85Ω; VBB2= 4V 0.3 μs isc Website:www.iscsemi.cn 2 |
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