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2SC4131 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4131 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 80mA B 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 15V ; IC= 0 10 μA hFE DC current gain IC= 5A ; VCE= 1V 60 360 fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 18 MHz COB Output Capacitance IE=0 ; VCB= 10V; ftest= 1.0MHz 210 pF Switching times ton Turn-on Time 0.5 μs tstg Storage Time 2.0 μs tf Fall Time IC= 5A , IB1= 80mA; IB2= -80mA RL= 4Ω; VCC= 20V 0.4 μs isc Website:www.iscsemi.cn 2 |
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