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2SC3858 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3858 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3858 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 200 V VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=8A ; VCE=4V 50 180 fT Transition frequency IC=1A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 300 pF Switching times ton Turn-on time 0.50 μs ts Storage time 1.80 μs tf Fall time IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V 0.60 μs hFE classifications Y P G 50-100 70-140 90-180 |
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