2SC3566 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3566

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 3.0A ; IB= 0.3A, L=1mH

VCEX(SUS)-1

Collector-Emitter Sustaining Voltage

IC= 3.0A ; IB1=-IB2= 0.3A,

VBE(OFF)=5.0V, L=180μH,clamped

VCEX(SUS)-2

Collector-Emitter Sustaining Voltage

IC= 6.0A ; IB1= 0.6A; IB2= -0.3A,

VBE(OFF)= -5.0V, L= 180μH,clamped

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3.0A; IB= 0.3A

0.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3.0A; IB= 0.3A

1.5

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

μA

ICER

Collector Cutoff Current

VCE= 60V; RBE= 51Ω, Ta=125℃

1.0

ICEX

Collector Cutoff Current

VCE= 60V; VBE(off)= -1.5V

VCE= 60V; VBE(off)= -1.5V, Ta=125℃

1.0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

μA

hFE-1

DC Current Gain

IC= 0.3A; VCE= 5V

hFE-2

DC Current Gain

IC= 3.0A; VCE= 5V

200

Switching times

ton

Turn-on Time

0.5

μs

tstg

Storage Time

3.0

μs

Fall Time

IC= 3.0A ,RL= 17Ω,

IB1= -IB2= 0.3A,VCC≈ 50V

0.5

μs

hFE-2 Classifications

40-80

60-120

100-200

isc Website：www.iscsemi.cn

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