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2SC3039 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3039 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3039 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 50 hFE-2 DC current gain IC=4A ; VCE=5V 8 fT Transition frequency IC=0.8A ; VCE=10V 20 MHz Cob Collector output capacitance f=1MHz ; VCB=10V 80 pF Switching times ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=5A, IB1=1A IB2=-1A; VCC=200V RL=40Ω 1.0 μs hFE-1 classifications L M N 15-30 20-40 30-50 |
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