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2SC2690 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2690 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2690 2SC2690A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 0.7 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.3 V ICBO Collector cut-off current VCB=120V; IE=0 1 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=5mA ; VCE=5V 35 hFE-2 DC current gain IC=0.3A ; VCE=5V 60 320 Cob Output capacitance IE=0 ; VCB=10V f=1MHz 19 pF fT Transition frequency IC=0.2A ; VCE=5V 155 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 |
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