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2SC2535 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2535 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2535 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA hFE DC current gain IC=3A ; VCE=5V 10 Switching times tr Rise time 1.0 μs tstg Storage time 2.5 μs tf Fall time VCC=200V; IB1=-IB2=0.3A;RL=68Ω Duty cycle≤1% 1.0 μs |
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