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B1383 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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B1383 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1383 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB= 0 B -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A ,IB= -24mA -2.5 V ICBO Collector Cutoff current VCB= -120V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -6V, IC= 0 -10 mA hFE DC Current Gain IC= -12A ; VCE= -4V 2000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 230 pF fT Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 50 MHz Switching Times ton Turn-On Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC = -12A,IB1 = -IB2= -24mA; VCC= -24V, RL= 2Ω 1.0 μs isc Website:www.iscsemi.cn |
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