2SB1133 datasheet(1/4 Pages) ISC

No. de pieza	2SB1133

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	4 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1133

DESCRIPTION

・With TO-220F package

・Complement to type 2SD1666

・Low collector saturation voltage

・Wide area of safe operation

APPLICATIONS

・For low-frequency and general-purpose

amplifier applications

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VCBO

Collector-base voltage

Open emitter

-60

V

VCEO

Collector-emitter voltage

Open base

-60

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-3

A

ICM

Collector current-peak

-8

A

Ta=25℃

2

PC

Collector dissipation

TC=25℃

25

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-40~150

℃

Fig.1 simplified outline (TO-220F) and symbol

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2SB1133 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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