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2SB601 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB601 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB601 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-3A, IB1=-3mA,L=1mH -100 V VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -10 μA ICEX Collector cut-off current VCE=-100V, VBE=-1.5V Ta=25℃ -10 -1.0 μA mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE-1 DC current gain IC=-3A ; VCE=-2V 2000 15000 hFE-2 DC current gain IC=-5A ; VCE=-2V 500 Cob Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 300 pF Switching times ton Turn-on time 0.5 μs tstg Storage time 1.0 μs tf Fall time IC=-3A; IB1=-IB2=-3mA VCC=-50V;RL=17Ω 1.0 μs hFE-1Classifications M L K 2000-5000 3000-7000 5000-15000 |
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