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2N6259 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6259
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6259 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistor
2N6259
DESCRIPTION
·DC Current Gain-
: hFE= 15-60@IC= 8A
·High Power Dissipation
: PD= 150W@ IC= 15A
APPLICATIONS
·Designed for high power audio, disk head positioners, linear
amplifiers, switching regulators,solenoid drivers,and DC-DC
converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.17
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
170
V
VCEO
Collector-Emitter Voltage
150
V
VCEX
Collector-Emitter Voltage
170
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
4
A
IBM
Base Current- Peak
15
A
PC
Collector Power Dissipation @TC=25℃
150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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