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2N5660 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2N5660
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5660 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N5660 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N5660 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N5660 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N5660 2N5661
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N5660
200
V(BR)CEO
Collector-emitter
breakdown voltage
2N5661
IC=10mA ; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ; IC=0
6
V
VCEsat-1
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A; IB=0.4A
0.8
V
VBEsat-1
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
2N5660
VCE=200V;VBE(off)=1.5V
ICES
Collector cut-off current
2N5661
VCE=300V;VBE(off)=1.5V
0.2
mA
2N5660
VCB=250V; IE=0
ICBO
Collector cut-off current
2N5661
VCB=400V; IE=0
1.0
mA
2N5660
40
hFE-1
DC current gain
2N5661
IC=50mA ; VCE=2V
25
2N5660
40
120
hFE-2
DC current gain
2N5661
IC=0.5A ; VCE=5V
25
75
hFE-3
DC current gain
IC=1A ; VCE=5V
15
hFE-4
DC current gain
IC=2A ; VCE=5V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
45
pF
2N5660
VCC=100V;IC=0.5A;IB1=-IB2=15mA
ton
Turn-on time
2N5661
VCC=100V;IC=0.5A;IB1=-IB2=25mA
0.25
μs
2N5660
VCC=100V;IC=0.5A;IB1=-IB2=15mA
0.85
toff
Turn-off time
2N5661
VCC=100V;IC=0.5A;IB1=-IB2=25mA
1.2
μs



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