2N4919 datasheet(1/3 Pages) ISC

No. de pieza	2N4919

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N4918 2N4919 2N4920

DESCRIPTION

・

・With TO-126 package

・Complement to type 2N4921/4922/4923

・Excellent safe operating area

・Low collector saturation voltage

APPLICATIONS

・For driver circuits ,switching ,and

amplifier applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N4918

-40

2N4919

-60

VCBO

Collector-base voltage

2N4920

Open emitter

-80

V

2N4918

-40

2N4919

-60

VCEO

Collector-emitter voltage

2N4920

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-1

A

ICM

Collector current-Peak

-3

A

IB

Base current

-1

A

PD

Total power dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

4.16

℃/W

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2N4919 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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