For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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GaAs pHEMT MMIC LOW NOISE

AMPLIFIER, 5 - 10 GHz

v01.0911

General Description

Features

Functional Diagram

Noise figure: 1.6 dB

Gain: 20 dB

p1dB output power: 16 dBm

supply Voltage: +3.5 V @ 80 mA

output ip3: 28 dBm

50 ohm matched input/output

Die size: 1.33 x 1.04 x 0.1 mm

Electrical Specifications

[1]

Typical Applications

This HmC902 is ideal for:

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• Military & Space

• Test Instrumentation

• ISM, UNII & WCS

The HMC902 is a GaAs MMIC Low Noise Amplifier,

which operates between 5 and 10 GHz. This self-

biased LNA provides 20 dB of small signal gain,

1.6 dB noise figure, and output IP3 of +28 dBm,

while requiring only 80 mA from a +3.5V supply.

The p1dB output power of 16 dBm enables the lNA

to function as a LO driver for balanced, I/Q or image

reject mixers. The HmC902 also features i/os that are

matched to 50 ohms for ease of integration into multi-

chip-modules (mCms). All data is taken with the chip in

a 50 ohm test fixture connected via two 0.025 mm (1

mil) diameter wire bonds of 0.31 mm (12 mils) length.

HMC902

parameter

min.

Typ.

max.

Units

frequency range

5 - 10

GHz

Gain

17

20

dB

Gain Variation over Temperature

0.012

dB / °C

Noise figure

1.6

2.1

dB

input return loss

12

dB

output return loss

15

dB

output power for 1 dB Compression

16

dBm

saturated output power (psat)

17.5

dBm

output Third order intercept (ip3)

28

dBm

supply Current (idd)

80

mA

[1] Vgg1 = Vgg2 = no connection, for normal, self-biased operation.