For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

7

7 - 4

Outline Drawing

Absolute Maximum Ratings

eleCTrosTATiC seNsiTiVe DeViCe

oBserVe HANDliNG preCAUTioNs

Drain Bias Voltage

+5V

Drain Bias Current

60 mA

rf input power

5 dBm

Gate Bias Voltage

-1 to 0.3 V

Continuous pdiss (T = 85 °C)

(derate 5.8 mw/°C above 85 °C)

0.55 w

Thermal resistance

(Channel to ground paddle)

172 °C/w

Channel Temperature

180 °C

storage Temperature

-65 to +150 °C

operating Temperature

-40 to +85 °C

HMC772LC4

v01.0709

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 2 - 12 GHz

NoTes:

1. pACKAGe BoDY mATeriAl: AlUmiNA.

2. leAD AND GroUND pADDle plATiNG: GolD flAsH oVer NiCKel.

3. DimeNsioNs Are iN iNCHes (millimeTers).

4. leAD spACiNG TolerANCe is NoN-CUmUlATiVe.

5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm DATUm – C –

6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To

pCB rf GroUND.