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HMC667LP2 Datasheet(PDF) 5 Page - Hittite Microwave Corporation |
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HMC667LP2 Datasheet(HTML) 5 Page - Hittite Microwave Corporation |
5 / 8 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 7 - 5 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 Vdc RF Input Power (RFIN) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 5.88 mW/°C above 85 °C) 0.38 W Thermal Resistance (Channel to Ground Paddle) 170 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz Noise Figure vs. Vdd w/ SDARS Tune [2] 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2.25 2.3 2.35 2.4 2.45 Vdd=5V Vdd=3V FREQUENCY (GHz) Gain & Return Loss w/ SDARS Tune [1] -25 -20 -15 -10 -5 0 5 10 15 20 25 2.25 2.3 2.35 2.4 2.45 S11 S22 S21 FREQUENCY (GHz) [1] Vdd = 5V [2] Measurement reference plane shown on evaluation PCB drawing. |
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