74LVC2G08GD datasheet(8/21 Pages) NXP

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74LVC2G08

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Product data sheet

Rev. 9 — 20 October 2010

8 of 21

NXP Semiconductors

74LVC2G08

Dual 2-input AND gate

[1]

Typical values are measured at nominal VCC and at Tamb = 25 °C.

[2]

tpd is the same as tPLH and tPHL

[3]

CPD is used to determine the dynamic power dissipation (PD in μW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

× f

o) = sum of outputs.

12. Waveforms

CPD

power dissipation

capacitance

per gate; VI = GND to VCC

[3]

14.4

Table 8.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

Measurement points are given in Table 9.

VOL and VOH are typical output voltage levels that occur with the output load.

Fig 8.

Input (nA, nB) to output (nY) propagation delays

mna224

nA, nB input

nY output

tPLH

tPHL

GND

VOH

VOL

Table 9.

Measurement points

Supply voltage

Input

Output

VCC

1.65 V to 1.95 V

0.5VCC

2.3 V to 2.7 V

0.5VCC

2.7 V

1.5 V

3.0 V to 3.6 V

1.5 V

4.5 V to 5.5 V

0.5VCC

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