MP6Z12 datasheet(1/8 Pages) ROHM

No. de pieza	MP6Z12

Descripción Electrónicos	Midium Power Transistors

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Fabricante Electrónico	ROHM [Rohm]

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Midium Power Transistors (±50V / ±1A)

MP6Z12



Structure



Dimensions (Unit : mm)

NPN/PNP Silicon epitaxial planar transistor



Features

1) Low saturation voltage, typically

VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA)

VCE (sat) = -0.40V (Max.) (IC / IB= -500mA / -25mA)

2) High speed switching



Applications



Inner circuit (Unit : mm)

Package

MPT6

Code

TR

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta = 25

C)

<Tr.1>

Symbol

Limits

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

6V

DC

IC

1A

Pulsed

ICP

2A

<Tr.2>

Symbol

Limits

Unit

Collector-base voltage

VCBO

-50

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-6

V

DC

IC

-1

A

Pulsed

ICP

-2

A

<Tr.1 and Tr.2>

Symbol

Limits

Unit

PD

2.0

W/Total

PD

1.4

W/Element

Junction temperature

Tj

150

C

Range of storage temperature

Tstg

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.

Parameter

Low Frequency Amplifier

Driver



Packaging specifications

Type

Parameter

Collector current

Power dissipation

Parameter

Collector current

*1

*2

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

*1

MPT6

(Dual)

(1)

(2)

(3)

(6)

(5)

(4)

(1)

(2)

(3)

(4)

(5)

(6)

Tr.1

Tr.2

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

1/7

2010.11 - Rev.A

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