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Midium Power Transistors (30V / 1A)

2SCR293P



Structure



Dimensions (Unit : mm)

NPN Silicon epitaxial planar transistor



Features

Low saturation voltage



Applications

Driver



Inner circuit (Unit : mm)

Package

MPT3

Code

T100

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta=25°C)

Symbol

Limits

Unit

Collector-base voltage

30

V

Collector-emitter voltage

30

V

Emitter-base voltage

6V

DC

1A

Pulsed

2A

0.5

W

2.0

W

Junction temperature

150

°C

Range of storage temperature

-55 to 150

°C

*1 Pw=10ms, Single Pulse

*2 Mounted on a recommended land

*3 Mounted on a 40×40×0.7 [mm] ceramic substrate



Packaging specifications

Type

Parameter

Collector current

Power dissipation

*1

*2

*3

(1) Base

(2) Collector

(3) Emitter

MPT3

(SC-63)

<SOT-428>

(1)

(2)

(3)

Abbreviated symbol : NV

(1) Base

(2) Collector

(3) Emitter

(1)

(3)

(2)

1/5

2010.12 - Rev.A