2

 2000 Semtech Corp.

www.semtech.com

POWER MANAGEMENT

SC1461

Electrical Characteristics

Absolute Maximum Ratings

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Sm

u

m

i

x

a

Ms

ti

n

U

e

g

a

tl

o

V

y

l

p

p

u

SV

N

I

4

+

o

t

3

.

0

-V

e

g

a

tl

o

V

t

u

p

t

u

OO

V6

+

o

t

3

.

0

-V

t

n

e

i

b

m

A

o

t

n

o

it

c

n

u

J

e

c

n

a

t

s

i

s

e

R

l

a

m

r

e

h

T

θ

A

J

0

1

4W

/

C

°

e

r

u

t

a

r

e

p

m

e

T

g

n

it

a

r

e

p

OT

A

5

8

+

o

t

0

4

-C

°

e

g

n

a

R

e

r

u

t

a

r

e

p

m

e

TT

J

5

2

1

+

o

t

0

4

-C

°

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

ST

G

T

S

0

5

1

o

t

5

6

-C

°

s

d

n

o

c

e

S

0

1

)

g

n

ir

e

d

l

o

S

(

e

r

u

t

a

r

e

p

m

e

T

d

a

e

LT

L

0

0

3C

°

Unless specified: 2.25V ≤ Vin ≤ 3.63V, 0 ≤ Io ≤ 8mA, Cin = 0.22uF, Cout = 47nF, Ta = -40 to 85 °C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

it

i

d

n

o

Cn

i

Mp

y

Tx

a

Ms

ti

n

U

e

g

a

tl

o

V

y

l

p

p

u

S

t

u

p

n

IV

N

I

5

2

.

23

6

.

3V

t

n

e

r

r

u

C

y

l

p

p

u

S

t

u

p

n

II

N

I

,

D

N

G

=

E

L

B

A

S

I

D

,

J

D

A

I

O

V

,

A

m

0

=

N

I

V

3

.

3

=

5

60

0

1A

µ

V

=

E

L

B

A

S

I

D

,

D

N

G

=

J

D

A

N

I

I

O

V

,

A

m

0

=

N

I

V

3

.

3

=

1

.

01

e

g

a

tl

o

V

t

u

p

t

u

OV

O

I

,

D

N

G

=

E

L

B

A

S

I

D

,

J

D

A

A

m

44

-N

I

V

X

5

1

5

.

14

%

V

=

J

D

A

N

I

I

,

D

N

G

=

E

L

B

A

S

I

D

,

A

m

74

-N

I

V

x

2

3

.

14

)

k

p

-

k

p

(

e

l

p

p

i

R

t

u

p

t

u

O

)

1

(

V

R

V

=

J

D

A

N

I

I

,

D

N

G

=

E

L

B

A

S

I

D

,

A

m

70

5V

m

t

n

e

r

r

u

C

t

u

p

t

u

OI

O

V

=

J

D

A

N

I

D

N

G

=

E

L

B

A

S

I

D

,

V

5

.

2

=7

8

A

m

V

,

D

N

G

=

E

L

B

A

S

I

D

,

J

D

A

N

I

V

3

.

3

=4

7

A

m

y

c

n

e

i

c

if

f

E

)

1

(

η

V

=

J

D

A

N

I

D

N

G

=

E

L

B

A

S

I

D

,

V

5

.

2

=

I

O

A

m

7

=

0

5%

y

c

n

e

u

q

e

r

F

r

o

t

a

lli

c

s

O

)

2

(

C

S

OV

=

J

D

A

N

I

D

N

G

=

E

L

B

A

S

I

D

,

V

5

.

2

=2

1z

H

M

V

,

D

N

G

=

E

L

B

A

S

I

D

,

J

D

A

N

I

V

3

.

3

=5

.

3

1

t

a

n

o

it

a

l

u

g

e

R

o

t

e

m

i

T

n

O

-

n

r

u

T

)

1

(

t

N

O

V

=

J

D

A

N

I

D

N

G

=

E

L

B

A

S

I

D

,

V

5

.

2

=

I

O

C

,

A

m

7

=

T

U

O

F

n

7

4

=

5

2s

µ

e

g

a

tl

o

V

d

l

o

h

s

e

r

h

T

e

l

b

a

s

i

DD

I

H

S

I

13

.

1V

D

O

L

S

I

5

.9

.

0V

t

n

e

r

r

u

c

e

l

b

a

s

i

DI

E

L

B

A

S

I

D

V

0

=

e

l

b

a

s

i

D1

0

1A

µ

NOTES:

(1) All electrical characteristics are for the application circuit on page 1.

(2) Guaranteed by design.

(3) This device is ESD sensitive. Use of standard ESD handling precautions is required.