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KTC4373 Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KTC4373 Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  1998. 6. 15 1/2 SEMICONDUCTOR TECHNICAL DATA KTC4373 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 2 HIGH VOLTAGE APPLICATION. FEATURES High Voltage : VCEO=120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTA1661. MAXIMUM RATING (Ta=25 ) DIM A B D E G H K 4.70 MAX 2.50 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 SOT-89 C J G D 12 3 2. COLLECTOR (HEAT SINK) A C K F MILLIMETERS H 1. BASE 3. EMITTER FF D + _ + _ ELECTRICAL CHARACTERISTICS (Ta=25 ) Note : hFE Classification O:80 160, Y:120 240 PC* : KTC4373 mounted on ceramic substrate (250mm 2x0.8t) Type Name h Rank FE Lot No. Marking CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V DC Current Gain hFE (Note) VCE=5V, IC=100mA 80 - 240 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.0 V Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V Transition Frequency fT VCE=5V, IC=100mA - 120 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 30 pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Base Current IB 160 mA Collector Power Dissipation PC 500 mW PC* 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 |
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Descripción similar - KTC4373 |
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