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2SC4617 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4617 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente 2SC4617 0.15A , 60V NPN Silicon General Purpose Transistor 24-Feb-2011 Rev. D Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low Cob. Cob=2.0pF Complement of 2SA1774 CLASSIFICATION OF hFE Product-Rank 2SC4617-Q 2SC4617-R 2SC4617-S Range 120~270 180~390 270~560 Marking BQ BR BS PACKAGE INFORMATION Package MPQ LeaderSize SOT-523 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 7 V Collector Currrent IC 150 mA Collector Power Dissipation PC 150 mW Junction & Storage Temperature TJ, TSTG 150, -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 60 - - V IC=50 μA, I E=0 Collector-emitter breakdown voltage V(BR)CEO 50 - - V IC=1 mA, I B=0 Emitter-base breakdown voltage V(BR)EBO 7 - - V IE=50 μA, I C=0 Collector cut-off current ICBO - - 0.1 μA VCB=60V, IE=0 Emitter cut-off current IEBO - - 0.1 μA VEB= 7V, IC=0 Collector-emitter saturation voltage * VCE(sat) - - 0.4 V IC=50mA, IB=5mA DC current gain hFE 120 - 560 VCE=6V, IC=1mA Transition frequency fT - 180 - MHz VCE=12V, IE=2mA, f=100MHz Collector output capacitance Cob - - 3.5 pF VCB=12V, IE=0, f=1MHz * Pulse Test :Pulse Width ≤300us,D.C ≤ 2% SOT-523 Top View A L M C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.75 0.85 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.25 M 0.25 0.325 |
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