SS8050T datasheet(1/2 Pages) SECOS

No. de pieza	SS8050T

Descripción Electrónicos	NPN Silicon General Purpose Transistor

PDF	2 Pages

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Fabricante Electrónico	SECOS [SeCoS Halbleitertechnologie GmbH]

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Any changing of specification will not be informed individual

SS8050T

NPN Silicon

General Purpose Transistor

Power dissipation

PCM : 1 W

Collector Current

ICM : 1.5 A

Collector-base voltage

FEATURES

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100

μA， IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 0.1mA

， IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100

μA， IC=0

5

V

Collector cut-off current

ICBO

VCB=40 V ,

IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=20V ,

IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V ,

IC=0

0.1

μA

HFE(1)

VCE=1V,

IC= 100m A

85

400

DC current gain

HFE(2)

VCE=1V,

IC= 800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=800 mA, IB= 80m A

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=800 mA, IB= 80m A

1.2

V

Transition frequency

fT

VCE=10V,

IC= 50mA

f=30MHz

100

MHz

CLASSIFICATION OF hFE(1)

Rank

B

C

D

E

Range

85-160

120-200

160-300

300-400

ELECTRICAL CHARACTERISTICS ( Tamp.=25

OC unless otherwise specified)

V(BR)CBO : 40 V

Operating & storage junction temperature

Tj, Tstg : - 55

O

C ~ + 150

O

C

1 2

TO-92

1. EMITTER

2. BASS

.

COLLECTOR

1

2

3

2

1

3

01-Jun-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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