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SS8050 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SS8050 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor 26-Oct-2009 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current ICM : 1.5A Collector - Base Voltage V(BR)CBO : 40V Operating & Storage junction temperature TJ, TSTG : -55℃ ~ +150℃ MARKING : Y1 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage IC =100µA, IE =0 V(BR)CBO 40 V Collector-Emitter Breakdown Voltage IC =0.1mA, IB =0 V(BR)CEO 25 V Emitter-Base Breakdown Voltage IE =100µA, IC =0 V(BR)EBO 5 V Collector Cut-Off Current VCB =40V, IE =0 ICBO 0.1 µA Collector Cut-Off Current VCB =20V, IE =0 ICEO 0.1 µA Emitter Cut-Off Current VEB =5V, IC =0 IEBO 0.1 µA VCE =1V, IC =100mA hFE1 120 400 DC Current Gain VCE =1V, IC =800mA hFE2 40 Collector-Emitter Saturation Voltage IC =800mA, IB =80mA VCE(sat) 0.5 V Base-Emitter Saturation Voltage IC =800mA, IB =80mA VBE(sat) 1.2 V Transition Frequency VCE =10V, IC=50mA,f=30MHz FT 100 MHz CLASSIFICATION OF hFE RANK L H J RANGE 120-200 200-350 300-400 MARKING Y1 SOT-23 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Top View A L C B D G H J F K E 1 2 3 1 2 3 |
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