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MRF581 Datasheet(PDF) 2 Page - Microsemi Corporation

No. de pieza MRF581
Descripción Electrónicos  RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
PDF  6 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MRF581 Datasheet(HTML) 2 Page - Microsemi Corporation

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Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
MRF581
MRF581G
MRF581A
MRF581AG
ELECTRICAL SPECIFICATIONS (Tcase = 25
°C)
STATIC
(off)
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
MRF581
(IC = 5.0 mAdc, IB = 0)
MRF581A
18
15
-
-
Vdc
BVCBO
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
30
-
-
Vdc
BVEBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
2.5
-
-
Vdc
ICBO
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
-
-
0.1
mA
IEBO
Emitter Cutoff Current
(Vbe = 2.5 Vdc)
-
-
0.1
mA
(on)
HFE
DC Current Gain
MRF581
(IC = 50 mAdc, VCE = 5.0 Vdc)
MRF581A
50
90
-
200
250
-
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
COB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
-
2.0
3.0
pF
Ftau
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
5.0
-
GHz



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