MMBT2907Q datasheet(2/3 Pages) SECOS

2 / 3 page

Any changing of specification will not be informed individual

MMBT2907Q

PNP Silicon

General Purpose Transistor

TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, Collector Current (mA)

0.3

0.5

0.7

1.0

3.0

0.2

–0.1

TJ = 125°C

°C

–55

°C

VCE = –1.0 V

VCE = –10 V

2.0

–0.2

–0.3

–0.5 –0.7

–1.0

–2.0

–3.0

–5.0 –7.0

–10

–20

–30

–50 –70

–100

–200

–300

–500

Figure 4. Collector Saturation Region

IB, Base Current (mA)

–0.4

–0.6

–0.8

–1.0

–0.2

IC = –1.0 mA

–0.005

–10 mA

–0.01

–100 mA

–500 mA

–0.02 –0.03 –0.05 –0.07 –0.1

–0.2

–0.3

–0.5 –0.7 –1.0

–2.0

–3.0

–5.0 –7.0 –10

–20

–30

–50

Figure 5. Turn–On Time

IC, Collector Current

300

–5.0

Figure 6. Turn–Off Time

IC, Collector Current (mA)

–5.0

200

100

7.0

5.0

3.0

–7.0 –10

–20 –30

–50 –70 –100

–200 –300

–500

2.0 V

td @ VBE(off) = 0 V

VCC = –30 V

IC/IB = 10

TJ = 25°C

500

300

100

7.0

5.0

–7.0 –10

–20 –30

–50 –70 –100

–200 –300 –500

200

′s = ts – 1/8 tf

VCC = –30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

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