MMBT589 datasheet(2/3 Pages) SECOS

2 / 3 page

Any changing of specification will not be informed individual

MMBT589

NP Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Figure 1. DC Current Gain versus

Collector Current

Figure 2. DC Current Gain versus

Collector Current

Figure 3. “On” Voltages

Figure 4. Base Emitter Saturation Voltage

versus Collector Current

Figure 5. Collector Emitter Saturation Voltage

versus Collector Current

Figure 6. Collector Emitter Saturation Voltage

versus Collector Current

0.001

IC, COLLECTOR CURRENT (AMPS)

200

150

100

IC, COLLECTOR CURRENT (mA)

100

1000

1.0

130

100

1000

1.0

IC, COLLECTOR CURRENT (mA)

1.0

0.4

0.3

0.2

0.1

IC, COLLECTOR CURRENT (AMPS)

0.01

0.001

1.0

0.95

0.6

0.55

0.5

1.0

0.01

IB, BASE CURRENT (mA)

1.0

0.6

0.4

0.2

IC, COLLECTOR CURRENT (AMPS)

0.001

1.8

1.0

0.8

0.6

0.2

0.1

0.01

0.1

1.0

110

150

170

0.1

1.0

1000

100

0.8

0.01

1.0

0.4

VCE = -2.0 V

190

210

230

VCE = -1.0 V

125°C

25°C

-55°C

0.8

0.7

0.6

0.5

0.9

VBE(sat)

VCE(sat)

VBE(on)

0.7

0.65

0.8

0.75

0.9

0.85

IC/IB = 100

IC/IB = 10

1.6

1.4

1.2

IC/IB = 100

IC/IB = 10

1000 mA

100 mA

50 mA

10 mA

01-Jun-2002 Rev. A

Page 2 of 3

MMBT589 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

MMBT589 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Html Pages

1 2 3

Datasheet Descarga

Enlace URL