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2SA562 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA562 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente 2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor 14-Jan-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J 3Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent hFE Linearity CLASSIFICATION OF hFE Product-Rank 2SA562-O 2SA562-Y Range 70~140 120~240 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -35 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 500 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -35 - - V IC= -100µA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100µA, IC = 0A Collector Cut-Off Current ICBO - - -0.1 µ A VCB= -35 V, IE = 0 A Emitter Cut-Off Current IEBO - - -0.1 µ A VEB= -5 V, IC = 0 mA DC Current Gain hFE 70 - 240 VCE= -1V, IC= -100mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.25 V IC= -100mA, IB= -10mA Base to Emitter Voltage VBE - - -1 V VCE= -1V , IC= -100mA Transition Frequency fT - 200 - MHz VCE = -6V, IC = -20mA Collector output capacitance Cob - 13 - pF VCB = -6V, IE= 0A, f= 1MHz TO-92 1 1 1 1 Emitter 2 2 2 2 Collector 3 3 3 3 Base Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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