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2N930CSM Datasheet(PDF) 2 Page - Seme LAB

No. de pieza 2N930CSM
Descripción Electrónicos  HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
PDF  2 Pages
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Fabricante Electrónico  SEME-LAB [Seme LAB]
Página de inicio  http://www.semelab.co.uk
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2N930CSM Datasheet(HTML) 2 Page - Seme LAB

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Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
nA
V
—
MHz
pF
Ω
x10-6
µmhos
—
dB
45
80
5
2
10
10
10
1
0.7
0.9
150
600
30
8
25
32
600
1
150
600
3
2N930CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
IC = 10mA
IB = 0
IC = 10µAIE = 0
IE = 10µAIC = 0
VCE = 5V
IB = 0
VCB = 45V
IE = 0
VCE = 45V
VBE = 0
VBE = 5V
IC = 0
IC = 10mA
IB = 0.5mA
VCE = 10V
IC = 500µA
VCE = 10V
IC = 10mA*
IC = 500µAVCE = 5V
f = 30MHz
IE = 0
VCB = 5V
f = 1MHz
IE = 1mA
VCB = 5V
f = 1kHz
VCE = 5V
IC = 0
f = 1MHz
VCE = 5V
IC = 10µA
RS = 10kΩ
f = 10Hz to 15.7kHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO
Collector – Base Breakdown Voltage
V(BR)EBO
Emitter – Base Breakdown Voltage
ICBO
Collector – Base Cut-off Current
IEBO
Emitter – Base Cut-off Current
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
hFE
DC Current Gain
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
hib
Input Impedance
hrb
Voltage Feedback Ratio
hob
Output Admittance
hfe
Small Signal Current Gain
NF
Noise Figure
* Pulse Test: tp ≤ 300µs, δ≤ 2%



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