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SDR75010 Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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SDR75010 Datasheet(HTML) 1 Page - Solid States Devices, Inc |
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1 / 3 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0148B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR75 __ U __ __ __ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Bend Options (TO-254, Z) DB = Down Bend UB = Up Bend Package S1= SMD1 M = TO-254 Z = TO-254Z Recovery Time U = Ultra Fast Family/Voltage 010 = 100V 015 = 150V 020 = 200V SDR75010U thru SDR75020U 75 AMP ULTRAFAST RECTIFIER 100 - 200 VOLTS 50 nsec FEATURES: Ultra Fast Recovery: 45 ns typical High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Hermetically Sealed Package, isolated (TO-254, Z) or hot case (SMD1) Gold Eutectic Die Attach Available Ultrasonic Aluminum Wire Bonds TX, TXV, or Space Level Screening Available Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage 3/ SDR75010 SDR75015 SDR75020 VRRM VRWM VR 100 150 200 Volts Average Rectified Forward Current 4/ (Resistive Load, 60 Hz Sine Wave, TC = 100ºC) IO 75 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25ºC, per leg) IFSM 350 Amps Operating & Storage Temperature TOP & TSTG -65 to +200 ºC Maximum Total Thermal Resistance Junction to Case, SMD1 Junction to Case, TO-254, Z RθJC 1.0 1.2 ºC/W NOTES: 1/ For ordering information, price, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Higher voltages available. SMD1 TO-254 TO-254Z |
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