IXGP50N60C4 datasheet(1/6 Pages) IXYS

No. de pieza	IXGP50N60C4

Descripción Electrónicos	High-Gain IGBTs

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

Logo

1 / 6 page

IXGA50N60C4

IXGP50N60C4

IXGH50N60C4

V

CES

= 600V

I

C110

= 36A

V

CE(sat)

≤≤≤≤≤ 2.50V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 150°C

600

V

CGR

T

J

= 25°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

90

A

I

C110

T

C = 110°C

36

A

I

CM

T

C = 25°C, 1ms

220

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 10Ω

I

CM = 72

A

(RBSOA)

Clamped Inductive Load

V

CE ≤ VCES

P

C

T

C = 25°C

290

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb.

M

d

Mounting Torque (TO-220 & TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS100298B(04/11)

G = Gate

D

= Collector

S = Emitter

Tab = Collector

TO-247 (IXGH)

G

E

C

C (Tab)

TO-263 AA (IXGA)

G

E

C (Tab)

G

C E

TO-220AB (IXGP)

C (Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified

Min.

Typ.

Max.

BV

CES

I

C

= 250

μA, V

GE = 0V

600

V

GE(th)

I

C

= 250

μA, V

CE = VGE

4.0

6.5

V

I

CES

V

CE = VCES, VGE = 0V

25

μA

T

J = 125°C

1 mA

I

GES

V

CE = 0V, VGE = ±20V

±100 nA

V

CE(sat)

I

C

= 36A, V

GE = 15V, Note 1

1.95

2.50

V

T

J = 125°C

1.65

V

High-Gain IGBTs

High-Speed PT Trench IGBT

Features

Optimized for Low Switching Losses

International Standard Packages

Square RBSOA

Advantages

Easy to Mount

Space Savings

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Lamp Ballasts

Número de pieza similar - IXGP50N60C4

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
IXYS Corporation	IXGP50N60B4	227Kb / 6P	High-Gain IGBTs

More results

Descripción similar - IXGP50N60C4

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Sirectifier Semiconduct...	SG7N06P	172Kb / 2P	Discrete IGBTs
IXYS Corporation	IXGA50N60B4	227Kb / 6P	High-Gain IGBTs
	IXGH6N170A	196Kb / 5P	High Voltage IGBTs
	IXGH24N170A	230Kb / 4P	High Voltage IGBTs
	IXGH24N170AH1	231Kb / 4P	High Voltage IGBTs w/Diode
	IXGH40N60C2	155Kb / 5P	C2-Class High Speed IGBTs
	IXGH40N120B2D1	220Kb / 7P	High Voltage IGBTs w/Diode
	IXGH24N60C4	136Kb / 2P	High-Gain IGBTs
	IXGT4N250C	163Kb / 4P	High Voltage IGBTs
	IXGQ50N60C4D1	203Kb / 7P	High-Speed PT Trench IGBTs

More results

IXGP50N60C4 Datasheet(PDF) 1 Page - IXYS Corporation

IXGP50N60C4 Datasheet(HTML) 1 Page - IXYS Corporation

Número de pieza similar - IXGP50N60C4

Descripción similar - IXGP50N60C4

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL