IXFP4N100Q datasheet(1/4 Pages) IXYS

No. de pieza	IXFP4N100Q

Descripción Electrónicos	HiperFET Power MOSFETs Q-Class

PDF	4 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

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DS98705B(04/11)

V

DSS

= 1000V

I

D25

= 4A

R

DS(on)

≤≤≤≤≤ 3.0Ω

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C4

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

16

A

I

A

T

C = 25°C4

A

E

AS

T

C = 25°C

700

mJ

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

5

V/ns

P

D

T

C = 25°C

150

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

C

Mounting Force (TO-263)

10..65/2.2..14.6

Nm/lb.in.

M

d

Mounting Torque (TO-220)

1.13/10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

IXFA4N100Q

IXFP4N100Q

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 AA (IXFA)

G

D S

TO-220AB (IXFP)

D (Tab)

G

S

D (Tab)

HiperFETTM

Power MOSFETs

Q-Class

Features

International Standard Packages

Avalanche Rated

Fast Intrinsic Diode

Low Q

G

Low R

DS(on)

Low Drain-to-Tab Capacitance

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

Temperature and Lighting Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 1.5mA

2.5

4.5

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 100 nA

I

DSS

V

DS = VDSS, VGS = 0V

50

μA

T

J = 125°C

1 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

3.0

Ω

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IXFP4N100Q Datasheet(PDF) 1 Page - IXYS Corporation

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