BSS138G-AE2-R datasheet(1/3 Pages) UTC

No. de pieza	BSS138G-AE2-R

Descripción Electrónicos	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

PDF	3 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

BSS138

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-271.c

N-CHANNEL LOGIC LEVEL

ENHANCEMENT MODE

DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows operation

to higher switching frequencies.

FEATURES

* RDS(ON)=3.5Ω @ VGS=10V

* RDS(ON)=6.0Ω @ VGS=4.5V

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

SYMBOL

2.Gate

1.Source

3.Drain

SOT-23-3

1

2

3

(JEDEC TO-236)

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

BSS138G-AE2-R

SOT-23-3

S

G

D

Tape Reel

MARKING

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BSS138G-AE2-R Datasheet(PDF) 1 Page - Unisonic Technologies

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