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SST25VF032B Datasheet(PDF) 1 Page - Microchip Technology |
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SST25VF032B Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 31 page  A Microchip Technology Company ©2011 Silicon Storage Technology, Inc. S71327-04-000 02/11 Data Sheet www.microchip.com www.sst.com Features: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency – Upto80MHz • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Read Current: 10 mA (typical) – Standby Current: 5 µA (typical) • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks • Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 7 µs (typical) • Auto Address Increment (AAI) Word Programming – Decrease total chip programming time over Byte-Pro- gram operations • End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Software Write Protection – Write protection through Block-Protection bits in status register • Temperature Range – Industrial: -40°C to +85°C • Packages Available – 8-lead SOIC (200 mils) – 8-contact WSON (5X6mm) • All devices are RoHS compliant 32 Mbit SPI Serial Flash SST25VF032B SST's 25 series Serial Flash family features a four-wire, SPI-compatible inter- face that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF032B devices are enhanced with improved operating frequency which lowers power consumption. SST25VF032B SPI serial flash memories are manufactured with SST's proprie- tary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. |
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