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APTCV60TLM24T3G Datasheet(PDF) 13 Page - Microsemi Corporation

No. de pieza APTCV60TLM24T3G
Descripción Electrónicos  CoolMOS & Trench Field Stop IGBT
PDF  13 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTCV60TLM24T3G Datasheet(HTML) 13 Page - Microsemi Corporation

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APTCV60TLM24T3G
www.microsemi.com
13 - 13
CR2 & CR3 Typical performance curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.4
0.8
1.2
1.6
2
2.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
10
20
30
01
23
4
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
Energy losses vs Collector Current
0
0.2
0.4
0.6
0.8
1
1.2
0
5
10
15
20
25
30
IC (A)
VCE = 800V
VGE = 15V
RG = 5Ω
TJ = 125°C
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
25
30
Gate resistance (ohms)
Switching Energy Losses vs Gate Resistance
VCE = 800V
VGE =15V
IC = 15A
TJ = 125°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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