2SC5684 datasheet(1/3 Pages) TOSHIBA

No. de pieza	2SC5684

Descripción Electrónicos	Switching Regulator and High-Voltage Switching

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2SC5684

2004-07-26

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5684

Switching Regulator and High-Voltage Switching

Applications

• Excellent switching times (IC = 0.3 A)

: tr = 0.7 µs (max), tf = 0.5 µs (max)

• High collector breakdown voltage: VCEO = 800 V

• High-speed DC-DC converter applications

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

900

V

Collector-emitter voltage

VCEO

800

V

Emitter-base voltage

VEBO

7

V

DC

IC

0.8

Collector current

Pulse

ICP

1.5

A

Base current

IB

0.4

A

Collector power dissipation

PC

1.8

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 720 V, IE = 0

―

100

µA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

1

mA

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0

900

―

V

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

800

―

V

hFE (1)

VCE = 5 V, IC = 1 mA

10

―

DC current gain

hFE (2)

VCE = 5 V, IC = 0.08 A

15

―

60

Collector-emitter saturation voltage

VCE (sat)

IC = 0.3 A, IB = 0.06 A

―

1.0

V

Base-emitter saturation voltage

VBE (sat)

IC = 0.3 A, IB = 0.06 A

―

1.2

V

Rise time

tr

―

0.7

Storage time

tstg

―

4.5

Switching time

Fall time

tf

IB1 = 0.06 A, IB2 = −0.12 A

Duty cycle ≤ 1%

―

0.5

µs

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10T1A

Weight: 1.5 g (typ.)

20 µs

VCC ≈ 360 V

Output

IB2

IB1

Input

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