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2SC5355 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5355 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page ![]() 2SC5355 2005-02-01 1 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current Pulse ICP 7 A Base current IB 1 A Ta = 25°C 1.5 Collector power dissipation Tc = 25°C PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B5A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7B7A Weight: 0.36 g (typ.) |
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