BC856AW datasheet(2/3 Pages) DIODES

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 6)

BC856

BC857

BC858

V(BR)CBO

-80

-50

-30

—

IC = 10μA, IB = 0

Collector-Emitter Breakdown Voltage (Note 6)

BC856

BC857

BC858

V(BR)CEO

-65

-45

-30

—

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 6)

V(BR)EBO

-5

—

IE = 1μA, IC = 0

DC Current Gain (Note 6)

Current Gain Group

hFE

125

220

420

180

290

520

250

475

800

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage (Note 6)

VCE(SAT)

—

-75

-250

-300

-650

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage (Note 6)

VBE(SAT)

—

-700

-850

—

-950

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage (Note 6)

VBE(ON)

-600

—

-650

—

-750

-820

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current (Note 6)

ICBO

—

-15

-4.0

µA

VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product

100

200

—

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

4.5

VCB = -10V, f = 1.0MHz

Noise Figure

—

VCE = -5.0V, IC = 200µA,

RS = 2kΩ, f = 1kHz,

Δf = 200Hz

Notes:

6. Short duration pulse test used to minimize self-heating effect.

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

150

200

250

0.1

100

1,000

I , COLLECTOR CURRENT (mA)

Fig. 2 Collector Emitter Saturation Voltage

vs. Collector Current

T = 25°C

T = -50°C

T = 150°C

0.1

0.2

0.3

0.4

0.5

= 10

DS30251 Rev. 8 - 2

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