2SC4667 datasheet(1/5 Pages) TOSHIBA

No. de pieza	2SC4667

Descripción Electrónicos	Ultra High Speed Switching Applications Computer, Counter Applications

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2SC4667

2003-03-27

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4667

Ultra High Speed Switching Applications

Computer, Counter Applications

· High transition frequency: fT = 400 MHz (typ.)

· Low saturation voltage: VCE (sat) = 0.3 V (max)

· High speed switching time: tstg = 15 ns (typ.)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

15

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

200

mA

Base current

IB

40

mA

Collector power dissipation

PC

100

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

-55~125

°C

Marking

Unit: mm

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1A

Weight: 0.006 g (typ.)

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2SC4667 Datasheet(PDF) 1 Page - Toshiba Semiconductor

2SC4667 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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