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AP7217D Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza AP7217D
Descripción Electrónicos  1.2V 600mA CMOS LDO
PDF  9 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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AP7217D Datasheet(HTML) 4 Page - Diodes Incorporated

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AP7217D
1.2V 600mA CMOS LDO
AP7217D Rev. 2
4 of 9
FEBRUARY 2009
www.diodes.com
© Diodes Incorporated
Electrical Characteristics
(TA = 25°C, CIN = 1µF, COUT = 1µF, VIN=5V, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Unit
IQ
Quiescent Current
IO = 0mA
-
40
60
μA
VOUT
Output Voltage
Accuracy
IO = 30mA
1.176
1.2
1.224
V
VOUT Temperature
Coefficient
-40
°C to 85°C, I
OUT = 30mA
-
±100
-
ppm /
oC
VDROPOUT
Dropout Voltage
IOUT = 600mA, VOUT = 1.2V
-
850
1300
mV
IOUT
Maximum Output
Current
600
-
-
mA
ILIMIT
Current Limit
-
850
-
mA
ISHORT
Short Circuit Current
-
200
-
mA
ΔV
LINE
Line Regulation
2.5V
≤ V
IN ≤ 5.5V; IOUT = 30mA
-
0.2
-
%/V
ΔV
LOAD
Load Regulation
(Note 4)
1mA
≤ I
OUT ≤ 300mA
15
35
mV
1mA
≤ I
OUT ≤ 600mA
30
55
mV
PSRR
Power Supply
Rejection
VIN = 4.3V+0.5Vp-pAC,
IOUT = 50mA
F = 1KHz
-
55
-
dB
Thermal Shutdown
Temperature
-
150
-
ºC
Thermal Shutdown
Hysteresis
-
30
-
ºC
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT89-3L (Note 5)
-
173
-
ºC/W
θ
JC
Thermal Resistance
Junction-to-Case
SOT89-3L (Note 5)
-
51
-
ºC/W
Notes:
4. Regulation is measured at constant junction temperature by low duty cycle pulse testing.
5. Test condition for SOT89-3L: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper, with minimum recommended pad layout,
no air flow.
Typical Application



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