2SC4541 datasheet(1/5 Pages) TOSHIBA

No. de pieza	2SC4541

Descripción Electrónicos	Power Amplifier Applications Power Switching Applications

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2SC4541

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4541

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)

• High speed switching time: tstg = 0.5 µs (typ.)

• Small flat package

• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

• Complementary to 2SA1736

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

80

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

6

V

Collector current

IC

3

A

Base current

IB

0.6

A

Collector power dissipation

PC

500

mW

Collector power dissipation

PC

(Note)

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Mounted on a ceramic substrate (250 mm

2 × 0.8 t)

Unit: mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)

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