2SC3474 datasheet(1/5 Pages) TOSHIBA

No. de pieza	2SC3474

Descripción Electrónicos	Switching Applications Solenoid Drive Applications

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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2SC3474

2005-02-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC3474

Switching Applications

Solenoid Drive Applications

• High DC current gain: hFE = 500 (min) (IC = 400 mA)

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

80

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

7

V

Collector current

IC

2

A

Base current

IB

0.5

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

PC

20

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

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2SC3474 Datasheet(PDF) 1 Page - Toshiba Semiconductor

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